Vignesh Babu R and Malathi M, Department of ECE, SRM University, Chennai, Tamil Nadu, India.
International Journal of Advanced Computing and Communication Systems
ISSN (Online) : 2347 - 9299
ISSN (Print) : 2347 - 9280
Received On :
Revised On :
Accepted On :
Published On :
Volume 01, Issue 02
Page No : 005-007
This paper reports an improved method for reducing the critical current density (JC) required to switch the direction of free layer (FL) magnetization of a spin-valve. nanopillar. Two FL structure one made of Co and the other one made of full-Heusler Co2FeAl0.5Si0.5 alloy in the form of elliptic cylinder were designed and analyzed for spin transfer torque switching using micromagnetic simulation. A spin polarized current applied perpendicular to the plane results in switching the direction of FL magnetization. The value of JC required for FL magnetization switching was found for both the structures. From the result obtained the JC of Co2FeAl0.5Fe0.5 FL structure is less compared to the Co FL structure since the value of spin polarization factor (P) is higher to the former material. The effect of FL thickness in defining the JC was also analyzed in the case of Co FL structure. With an increment of 0.5 nm thickness the JC value get incremented by a value of 1.5 x 1010A/m2. It is observed that the P and thickness of FL structure plays a crucial role in defining the JC of a spin-valve nanopillar.
spin-valve, spin transfer torque, critical current density, spin polarization factor.
Vignesh Babu R and Malathi M, “Micromag etic Simulation of Ferromagnetic Free Layer Switching Mechanism of a spin-valve,” International Journal of Advanced Computing and Communication Systems, pp. 005-007, July, 2014.
© 2014 Vignesh Babu R and Malathi M. This is an open access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original author and source are credited.
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